(2) “Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping”

  • by Jaesung Park†, Sae Byeok Jo†, Young-Jun Yu, Youngsoo Kim, Jae Won Yang, Wi Hyoung Lee, Hyun Ho Kim, Byung Hee Hong* Philip Kim, Kilwon Cho*, and Kwang S. Kim*

  • Advanced Materials, 2012, 24, 407

  • Published Online on 12 DEC 2011

  • DOI:10.1002/adma.201103411

  • (†Equally contributed) Role: Device Fabrication and Characterization, Data Analysis and Paper Writing

Abstract Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.